We measure record-high sensitivities of up to 0.12 A/W at a wavelength of 1550 nm.
The detectors exhibit opto-electronic bandwidths of at least 40 GHz.
In this paper, we demonstrate a novel class of IPE devices with performance parameters comparable to those of state-of-the-art photodiodes while maintaining footprints below .
The structures are based on asymmetric metal–semiconductor–metal waveguides with a width of less than 75 nm.
We demonstrate reception of on–off keying data at rates of 40 Gbit/s.
© 2016 Optical Society of America Full Article | PDF Article Plasmonic enhanced silicon pyramids for internal photoemission Schottky detectors in the near-infrared regime Boris Desiatov, Ilya Goykhman, Noa Mazurski, Joseph Shappir, Jacob B.
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